Performant Cmos Active Resistor Based on Improved Linearity Differential Structures

نویسنده

  • Cosmin Popa
چکیده

An original active resistor circuit will be presented, having the main advantages of an improved linearity, a small area consumption and a very good frequency response. An original technique for linearizing the ) (V I characteristic of the active resistor will be proposed, based on the utilization of a new linear differential amplifier and on a currentpass circuit. The linearization of the original differential structure will be achieved by implementing an original method of compensating the quadratic characteristic of the MOS transistor working in saturation by two complementary square-root circuits. The errors introduced by the second-order effects will be quantitative evaluated, while the circuit frequency response of the circuit will be very good as a result of biasing all MOS transistors in the saturation region and of a current-mode operation of the square-root circuits. The active resistor is implemented in m 35 0 μ . CMOS technology, the linearity error being under a percent for an extended input range and for a small value of the supply voltage ) ( V 3 ± .

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Improved Linearity CMOS Active Resistor Structure Using Computational Circuits

A new low-power low-voltage active resistor structure with improved performances will be presented. The problem of circuit linearity is solved by implementing an original technique, using a proper current biasing of the differential core, while the existing solutions allow only a partial improvement of the circuit performances. The structures are implemented in m 35 . 0  CMOS technology and ar...

متن کامل

A 1.5V,100MS/s,12-bit Current-Mode CMOSS ample-and-Hold Circuit

A high-linearity and high-speed current-mode sampleand-hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal dependent -error is completely eliminated by a new zero voltage switching technique. The circui...

متن کامل

Microsoft Word - CONTENTS-DECEMBER06

A high-linearity and high-speed current-mode sampleand-hold circuit is designed and simulated using a 0.25μm CMOS technology. This circuit design is based on low voltage and it utilizes a fully differential circuit. Due to the use of only two switches the switch related noise has been reduced. Signal dependent -error is completely eliminated by a new zero voltage switching technique. The circui...

متن کامل

Improving Linearity of CMOS Variable-gain Amplifier Using Third-order Intermodulation Cancellation Mechanism and Intermodulation Distortion Sinking Techniques

This paper presents an improved linearity variable-gain amplifier (VGA) in 0.18-µm CMOS technology. The lineari­ty improvement is resulted from employing a new combinational technique, which utilizes third-order-intermodulation (IM3) cancellation mechanism using second-order-intermodul­ation (­IM2) injection, and intermodulation distortion (IMD) sinking techniques. The proposed VGA gain cell co...

متن کامل

Fully Differential Current Buffers Based on a Novel Common Mode Separation Technique

In this paper a novel common mode separation technique for implementing fully differential current buffers is introduced.  Using the proposed method two high CMRR (Common Mode Rejection Ratio) and high PSRR (Power Supply Rejection Ratio) fully differential current buffers in BIPOLAR and CMOS technologies are implemented.   Simulation results by HSPICE using 0.18μm TSMC process for CMOS based st...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005